Publications

Journals and Conferences

Google Scholar – https://scholar.google.com/citations?user=NVcyQ3wAAAAJ&hl=en&oi=ao

• Rich, D., T. Srimani, M. Malakoutian, S. Chowdhury, S. Mitra, “Efficient Ultra-Dense 3D IC Power Delivery and Cooling Using 3D Thermal Scaffolding,” IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 2024 (To Appear)
• Srimani, T., A. Bechdolt, S. Choi, C. Gilardi, A. Kasperovich, S. Li, Q. Lin, M. Malakoutian, P. McEwen, R. M. Radway, D. Rich, A. C. Yu, S. Fuller, S. Achour, S. Chowdhury, H.-S. P. Wong, M. Shulaker, S. Mitra, “N3XT 3D Technology Foundations and Their Lab-to-Fab: Omni 3D Logic, Logic+Memory Ultra-Dense 3D, 3D Thermal Scaffolding,” IEEE International Electron Devices Meeting (IEDM), December 2023
• Gilardi, C., G. Zeevi, S. Choi, S. Su, T. Hung, S. Li, N. Safron, Q. Lin, T. Srimani, M. Passlack, G. Pitner, E. Chen, I. Radu, H. P. Wong, S. Mitra, “Barrier Booster for Remote Extension Doping and its DTCO in 1D & 2D FETs”, IEEE International Electron Devices Meeting (IEDM), December 2023
• Srimani, T. #^, A.C. Yu ^, R. Radway ^, D. Rich, M. Nelson, S. Wong, D. Murphy, S. Fuller, G. Hills, S. Mitra and M. Shulaker, “Foundry Monolithic 3D BEOL Transistor + Memory Stack: Iso-performance and Iso-footprint BEOL Carbon Nanotube FET+RRAM vs. FEOL Silicon FET+RRAM,” IEEE Symp. VLSI Technology, June 2023 (Technology Focus Session and Best Student Paper)
• Shulaker, M., T. Srimani, S. Fuller, Y. Stein, and D. Murphy. “Back-gate field-effect transistors and methods for making the same.” U.S. Patent 11,626,486 issued April 11, 2023
• Srimani, T. #^, R. Radway ^, J. Kim ^, Prabhu K., et al. “Ultra-dense 3D Physical Design Unlocks New Architectural Design Points with Large Benefits” 2023 ACM/IEEE Design, Automation & Test in Europe Conference & Exhibition (DATE)
• Srimani, T. #^, J. Ding, A. C. Yu, et al. “Comprehensive Study on High Purity Semiconducting Carbon Nanotube Extraction” Advanced Electronic Materials (2022)
• Srimani, T. #^, A. C. Yu ^, et al. “ Lift-off-Free Complementary Carbon Nanotube FETs Fabricated with Conventional Processing in a Silicon Foundry” IEEE VLSI-TSA, (2022), pp. 1-2
• Yu, A.C., T. Srimani, et al. “ Foundry Integration of Carbon Nanotube FETs at the 90 nm Node with New Lift-off-free Process.” IEEE EDL (2022), 43(3), pp. 486-489
• Srimani, T. #^, G. Hills ^, M. Bishop, C. Lau et al. “Heterogeneous Integration of BEOL Logic and Memory in a Commercial Foundry: Multi-tier Complementary Carbon Nanotube Logic and Resistive RAM at a 130 nm node” (Joint Focus in Technology and Circuits), IEEE Symp. on VLSI Technology and Circuits, (2020), pp. 1-2
• Lau, C., G. Hills, M. D. Bishop, T. Srimani, R. Ho, P. Kanhaiya, A. Yu, A. Amer, M. Chao, and M. M. Shulaker. “Manufacturing Methodology for Carbon Nanotube Electronics.” IEEE VLSI-TSA, (2020), pp. 134-135
• Hills, G., C. Lau, T. Srimani, M.D. Bishop, P. Kanhaiya, R. Ho, A. Amer, and M. M. Shulaker. “Advances in Carbon Nanotube Technologies: From Transistors to a RISC-V Microprocessor.” ISPD, (2020), pp. 33-38
• Bishop, M. D., G. Hills, T. Srimani, C. Lau, et al. “Fabrication of carbon nanotube field-effect transistors in commercial silicon manufacturing facilities.” Nature Electronics, (2020), 3(8), pp. 492-501
• Hills, G., C. Lau, A. Wright, S. Fuller, M. D. Bishop, T. Srimani, P. Kanhaiya et al. “Modern microprocessor built from complementary carbon nanotube transistors.” Nature, (2019), 572(7771), pp. 595-602
• Srimani, T. #, G. Hills, C. Lau, and M. Shulaker. “Monolithic Three-Dimensional Imaging System: Carbon Nanotube Computing Circuitry Integrated Directly Over Silicon Imager.” (Technology Highlight + Demo Session), IEEE Symp. on VLSI Tech., (2019), pp. T24-T25
• Srimani, T. #, G. Hills, X. Zhao, D. Antoniadis, J. A. del Alamo, and M. M. Shulaker. “Asymmetric gating for reducing leakage current in carbon nanotube field-effect transistors.” APL, (2019), 115(6), pp. 063107
• Srimani, T., G. Hills, M. D. Bishop, and M.M. Shulaker. “30-nm Contacted Gate Pitch Back-Gate Carbon Nanotube FETs for Sub-3-nm Nodes.” IEEE TNANO (2018), 18, pp. 132-138
• Lau, C., T. Srimani, M. D. Bishop, G. Hills, and M. M. Shulaker. “Tunable n-type doping of carbon nanotubes through engineered atomic layer deposition HfOX films.” ACS nano, (2018), 12(11), pp. 10924-10931
• Srimani, T., G. Hills, M.D. Bishop et. al. “Negative capacitance carbon nanotube FETs.” IEEE EDL, (2017), 39(2), pp. 304-307
• Srimani, T., B. Manna, A.K. Mukhopadhyay, K. Roy, and M. Sharad, “Robust and high sensitivity biosensor using injection locked spin torque nano-oscillators.” In 2016 IEEE DRC, pp. 1-2

Corresponding author: #; Equal Contribution: ^

Invited Articles & Presentations

• Srimani, T. “The next leap in computing systems: powered by beyond-silicon technologies and their lab-to-fab” ECE Graduate Seminar Series, Carnegie Mellon University (Sep 2024)
• Srimani, T., R Radway, M Mohseni, K Çamsarı, S Mitra “Next-generation Probabilistic Computing Hardware with 3D MOSAICs, Illusion Scale-up, and Co-design”, DOE ASCR Analog Computing for Science Workshop, Bethesda, Maryland (Sep 2024)
• Srimani, T. “NanoSystems: Lab-to-fab and Co-design” Department of Electrical Engineering, Indian Institute of Technology, Bombay, India (Aug 2024)
• Srimani, T. “The next leap in computing systems: powered by beyond-silicon technologies and their lab-to-fab” Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, India (Aug 2024)
• Srimani, T. “Foundry Monolithic 3D Logic+Memory Stack unlocks Large IC Architectural Benefits” (3D Integration Workshop), In 2024 IEEE DATE conference (Mar 2024)
• Radway, R., Srimani, T. “New Foundry Monolithic 3D Transistor+Memory Unlocks Large Benefits vs. Conventional Silicon Transistor+Memory within the Same Footprint​” SystemX Fall Conference, Stanford University (Nov 2023)
• Srimani, T. “New Foundry Monolithic 3D BEOL Transistor+Memory Stack Unlocks Large IC Architectural Benefits Within the Same Design Footprint at the Same Technology Node ” IEEE/ACM ICCAD SLIP Workshop, San Francisco, USA (November 2023)
• Srimani, T. “NanoSystems: Lab to Fab” IEEE IISc Bangalore, Bangalore, India (July 2023)
• Srimani, T. “NanoSystems: Lab to Fab” IEEE Leuven/MICAS, KU Leuven (April 2023)
• Srimani, T., M. Shulaker “Talk is Cheap: It Takes Money to Ride the Train” 6.nano seminar series, EECS, MIT (Nov 2022)
• Srimani, T., R.M. Radway “Foundry Monolithic 3D Technology Enables New Architectural Design Points with Large Benefits” SystemX Fall Conference, Stanford University (Nov 2022)
• Srimani, T. “NanoSystems: Lab to Fab” ECE Graduate Seminar Series, Carnegie Mellon University (Nov 2022)
• Srimani, T., R.M. Radway, H.-S.P. Wong, S. Mitra “The Future of Hardware Technologies for Computing: N3XT 3D MOSAIC, Illusion Scaleup, Co-Design” TCVLSI newsletter (May 2022)
• Srimani, T. “Nanosystems for Energy-Efficient Computing using Carbon Nanotube FETs and Monolithic 3D Integration” (3D Integration Workshop), In 2022 ACM/IEEE Design, Automation & Test in Europe Conference & Exhibition (DATE) (Mar 2022)
• Srimani, T. “ Commercial Opportunities for RRAM, CNTs, and Monolithic 3D in the US” CICS Meeting, MTL, MIT (Nov 2021)
• Srimani, T. “Beyond-Silicon Technologies for Beyond-Silicon Applications.” CICS Meeting, MTL, MIT (May 2021)
• Srimani, T. “Establishing Emerging Nanotechnologies to Supplement Silicon CMOS within Commercial Fabs and Foundries.” CICS Meeting, MTL, MIT (May 2020)
• Srimani, T. “Back Gate Transistors for Highly Scaled and Energy Efficient Digital Electronics” (Best Poster), Masterworks, EECS, MIT (Apr 2018)
• Srimani, T. “Energy-efficient Digital VLSI using Carbon Nanotube Transistors” Department of E&ECE, Indian Institute of Technology, Kharagpur, India (Mar 2018)
• Srimani, T. “Back Gate Transistors for Highly Scaled and Energy Efficient Digital Electronics” MTL Annual Research Conference, MIT (Feb 2018)
• Srimani, T. “ Beyond silicon technologies and heterogeneous integration” Guest Lecture, 6.374, Analysis and Design of Digital Integrated Circuits, MIT (Nov 2017)
• Srimani, T., Chen, L., Ma, Y. and Zhou, C., “Electronics and optoelectronics of a novel transition metal dichalcogenide.” (poster) Indian National Science Academy, Delhi (Aug 2015)